july 2011 ?2011 fairchil d semiconductor corporation www.fairchildsemi.com 1 n-channel powertrench ? mosfet 30 v, 21 a, 9.5 m : features ? max r ds(on) = 9. 5 m : at v gs = 10 v , i d = 13.5 a ? max r ds(on) = 14.5 m : at v gs = 4.5 v, i d = 10.9 a ? advanced package and silicon combination for low r ds(on) and high efficiency ? msl1 rob ust package design ? rohs compliant general description the has been designed to minimize losses in conversion application. advancements in both silicon r ds(on) while maintaining excellent switching perfo rmance. applications ? synchronous buck for notebook vcore and s erver ? notebook battery pack ? load switch mosfet maximum ratings t a = 25 c unless ot herwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source v oltage 30 v v gs gate to source vo ltage 20 v i d drain curr ent -continuous (package limited) t c = 25 c 21 a -continuous (silicon limited) t c = 25 c51 -continuous t a = 25 c (note 1a) 13.5 -pulsed 80 e as sin gle pulse avalanche energy (note 3) 54 mj p d power dissipation t c = 25 c 42 w power dissipation t a = 25 c (note 1a) 2.5 t j , t stg operating and s torage junction temperature range -55 to +150 c r t jc thermal resistance, junction to case 3.3 c /w r t ja the rmal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity 8888 power 56 13 12 mm 3000 units g s s s d d d d 5 6 7 8 3 2 1 4 bottom power 56 top pin 1 g s s s d d d d fd ms8888 nnnn FDMS8888 n-ch a nnel powertrenc h ? mosfet fdms 8888 FDMS8888 rev.c FDMS8888 power and package technologies have been combined to offer the lowest
www.fairch ildsemi.com 2 electrical characteristics t j = 25 c unless otherwise noted off charact eristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter t est conditions min typ max units bv dss drain to source breakdown v oltage i d = 250 p a, v gs = 0 v 30 v ' bv dss ' t j breakdown v oltage temperature coefficient i d = 250 p a, referenced to 25 c 19 mv/c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 p a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 10 0na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 1.2 1.9 2.5 v ' v gs(th) ' t j gate to source threshold v oltage temperature coefficient i d = 250 p a, referenced to 25 c -7 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d m : v gs = 4.5 v, i d = 10.9 a 11 14.5 v gs = 10 v, i d = 13.5 a, t j = 125 c g fs forwar d transconductance v dd = 10 v, i d = 13.5 a 78 s c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 1195 1585 pf c oss output capacit ance 234 315 pf c rss reverse tr ansfer capacitance 161 245 pf r g gate resist ance 0.9 2.5 : t d(on) turn -on delay time v dd = 15 v, i d = 13.5 a, v gs = 10 v, r gen = 6 : 918n s t r rise time 61 2ns t d(off) turn-off delay time 23 27 ns t f fall t ime 410ns q g total ga te charge v gs = 0 v to 10 v v dd = 15 v, i d = 13.5 a 23 33 nc q g total ga te charge v gs = 0 v to 5 v 13 18 nc q gs gate to source charge 3.5 nc q gd gate to drain miller char ge 5.1 nc v sd source to drain diode forward v oltage v gs = 0 v, i s = 2.1 a (note 2) 0.74 1.2 v v gs = 0 v, i s = 13.5 a (note 2) 0.84 1.2 v t rr reverse recovery time i f = 13.5 a, di/dt = 100 a/ p s 20 32 ns q rr reverse recovery charge 816nc notes: 1. r t ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2. pulse test: pulse width < 300 p s, duty cycle < 2.0%. 3. starting t j = 25 c, l = 0.3 mh, i as = 19 a, v dd = 27 v, v gs = 10 v. b. 125 c/w when mounted on a minimum pad of 2 oz copper. a. 50 c/w when mounted on a 1 in 2 pad of 2 oz copper. = 13.5 a 8 9.5 12 14.5 ?2011 fairchil d semiconductor corporation FDMS8888 rev. c FDMS8888 n-ch a nnel powertrenc h ? mosfet
www.fair childsemi.com 3 typical characteristics t j = 25 c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 v gs = 3.5 v v gs = 6 v pu lse duration = 80 p s dut y cycle = 0.5% max v gs = 4.5 v v gs = 3 v v gs = 10 v i d , drain current (a) v ds , dra in to source voltage (v) on region characteristics figure 2. 0 20 40 60 80 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 3 .5 v pu lse duration = 80 p s dut y cycle = 0.5% max normalized drain to source on-resistance i d , dr ain current (a) v gs =4.5 v v gs = 6 v v gs = 3 v v gs =1 0 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = 13.5 a v gs = 10 v normalized drain to source on-resistance t j , ju nction temperature ( o c ) vs junction temperature figure 4. 24681 0 0 10 20 30 40 t j = 150 o c i d = 13.5 a t j = 2 5 o c v gs , ga te to source voltage (v) r d s(on) , dr ain to source on-resistance ( m : ) p ulse duration = 80 p s du t y c y cle = 0 . 5 % max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0 12345 0 20 40 60 80 t j = 150 o c v ds = 5 v puls e duration = 80 p s d uty cycle = 0.5% max t j = -55 o c t j = 2 5 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 100 t j = - 55 o c t j = 25 o c t j = 1 75 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current ?2 011 fairchild semiconductor corporation FDMS8888 rev. c FDMS8888 n-ch a nnel powertrenc h ? mosfet
www.fair childsemi.com 4 figure 7. 0 5 10152025 0 2 4 6 8 10 i d = 13.5 a v dd = 2 0 v v dd = 1 0 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 1 5 v gate charge characteristics figure 8. 0.1 1 10 100 1000 f = 1 mhz v gs = 0 v capa citance (pf) v ds , drain to source voltage (v) c rs s c os s c is s 30 2000 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1 10 t j = 10 0 o c t j = 2 5 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) 20 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 10 20 30 40 50 60 v gs = 4 .5 v li mited by package r t jc = 3 .3 o c/ w v gs = 10 v i d , drain current (a) t c , ca se temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 10 s 1 s dc 10 0 ms 10 ms 1 m s 10 0 us i d , drain current (a) v ds , drain to source voltage (v) t his area is limited by r ds(on) single pulse t j = m ax rated r t ja = 125 o c/w t a = 2 5 o c figure 12. 10 -3 10 -2 10 -1 11 0 100 1000 1 10 10 2 si ngle pulse r t ja = 125 o c/ w t a = 25 o c v gs = 1 0 v p ( pk ) , pea k transient power (w) t , pulse width (sec) 0. 2 500 s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted ?2 011 fairchild semiconductor corporation FDMS8888 rev. c FDMS8888 n-ch a nnel powertrenc h ? mosfet
www.fair childsemi.com 5 figure 13. 10 -3 10 -2 10 -1 11 0 100 1000 0.01 0.1 1 si ngle pulse r t ja = 125 o c/w d uty cycle-descending order no rmalized thermal impedance, z t ja t , rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 0.003 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a junction-to-ambient transient thermal response curve typical characteristics t j = 25 c unless otherwise noted ?2 011 fairchild semiconductor corporation FDMS8888 rev. c FDMS8888 n-ch a nnel powertrenc h ? mosfet
www.fair childsemi.com 6 dimensional outline and pad layout ?2 011 fairchild semiconductor corporation FDMS8888 rev. c FDMS8888 n-ch a nnel powertrenc h ? mosfet
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uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i55 fd ms8888 n-ch a nnel powertren c h ? mosfet ?2011 fairchild semiconductor corporation 7 www.fairchildsemi.com fd ms8888 rev. c
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